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LMC660

www.ti.com

SNOSBZ3D–APRIL1998– REVISEDMARCH2013

LMC660 CMOS Quad Operational Amplier

Check forSamples: LMC660

1

FEATURES DESCRIPTION

The LMC660 CMOS Quad operational amplier is

2

•Rail-to-Rail OutputSwingideal foroperation from asingle supply. Itoperates

•Specied for2 kand 600LoadsΩ Ωfrom +5V to +15.5V and features rail-to-rail output

•High Voltage Gain:126 dBswingin addition to an inputcommon-mode range

that includes ground. Performance limitations that

•Low InputOset Voltage:3 mVhave plagued CMOS ampliers in the past are not a

•Low OsetVoltage Drift:1.3V/°Cμproblem with this design. Input VOS, drift, and

•Ultra LowInput BiasCurrent:2 fAbroadband noise as well as voltage gain into realistic

loads (2kand 600) areall equal to or better thanΩ Ω

•Input Common-Mode Range IncludesV−

widely acceptedbipolar equivalents.

•Operating Range from +5V to +15.5V Supply

This chip is built with TI's advanced Double-Poly

• ISS = 375A/Amplier; Independentof Vμ+

Silicon-Gate CMOS process.

•Low Distortion:0.01%at 10kHz

See the LMC662 datasheet for a dual CMOS

•Slew Rate:1.1V/sμoperational amplierwith thesesame features.

APPLICATIONS

•High-Impedance Bueror Preamplier

•Precision Current-to-Voltage Converter

•Long-Term Integrator

•Sample-and-Hold Circuit

•Peak Detector

•Medical Instrumentation

•Industrial Controls

•Automotive Sensors

Connection Diagrams

Figure 1.14-Pin SOIC/PDIPFigure 2.LMC660 CircuitTopology (Each

Amplier)

1

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Texas Instrumentssemiconductor productsand disclaimersthereto appearsat theend ofthis datasheet.

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Products conform to specications per theterms of theTexas

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