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LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and

Temperature Reporting

1 Features

•Qualified for JEDEC JEP180 for hard-switching

topologies

•600V GaN-on-Si FET with integrated gate driver

–Integrated high precision gate bias voltage

–200V/ns FET hold-off

–2.2MHz switching frequency

–20V/ns to 150V/ns slew rate for optimization of

switching performance and EMI mitigation

–Operates from 7.5V to 18V supply

•Robust protection

–Cycle-by-cycle overcurrent and latched short-

circuit protection with < 100ns response

–Withstands 720V surge while hard-switching

–Self-protection from internal overtemperature

and UVLO monitoring

•Advanced power management

–Digital temperature PWM output

–LMG3426R030 includes zero-voltage detection

(ZVD) feature that facilitates soft-switching

converters

–LMG3427R030 includes zero-current detection

(ZCD) feature that facilitates soft-switching

converters

2 Applications

•Switch-mode power converters

•Merchant network and server PSU

•Merchant telecom rectifiers

•Solar inverters and industrial motor drives

•Uninterruptible power supplies

OCP, SCP,

OTP, UVLO

VDD

LDO5V

IN

RDRV

Current

Direct-Drive

Slew

Rate

LDO,

BB

GaN

DRAIN

SOURCE

SOURCE

VNEG

OC or ZVD or ZCD

FAULT

TEMP

Simplified Block Diagram

3 Description

The LMG342xR030 GaN FET with integrated driver

and protection is targeted at switch-mode power

converters and enables designers to achieve new

levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that

enables switching speed up to 150V/ns. TI’s

integrated precision gate bias results in higher

switching SOA compared to discrete silicon gate

drivers. This integration, combined with TI's low-

inductance package, delivers clean switching and

minimal ringing in hard-switching power supply

topologies. Adjustable gate drive strength allows

control of the slew rate from 20V/ns to 150V/ns,

which can be used to actively control EMI and

optimize switching performance. The LMG3426R030

includes the zero-voltage detection (ZVD) feature

which provides a pulse output from the ZVD pin when

zero-voltage switching is realized. The LMG3427R030

includes the zero-current detection (ZCD) feature

which provides a pulse output from the ZCD pin when

a positive drain-to-source current is detected .

Advanced power management features include

digital temperature reporting and fault detection.

The temperature of the GaN FET is reported

through a variable duty cycle PWM output, which

simplifies managing device loading. Faults reported

include overcurrent, short-circuit, overtemperature,

VDD UVLO, and high-impedance RDRV pin.

Package Information

PART NUMBERPACKAGE

(1)

PACKAGE SIZE

(2)

LMG3422R030

RQZ (VQFN, 54)12.00mm × 12.00mmLMG3426R030

LMG3427R030

(1)For more information, see the Mechanical, Packaging, and

Orderable Informationsection.

(2)The package size (length × width) is a nominal value and

includes pins, where applicable.

Device Information

PART NUMBER

ZERO-VOLTAGE

DETECTION

FEATURE

ZERO-CURRENT

DETECTION

FEATURE

LMG3422R030——

LMG3426R030Yes—

LMG3427R030—Yes

LMG3422R030, LMG3426R030, LMG3427R030

SNOSDA7F – SEPTEMBER 2020 – REVISED AUGUST 2024

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

Produktspecifikationer