Texas Instruments CSD22204W Bruksanvisning

Läs gratis den bruksanvisning för Texas Instruments CSD22204W (12 sidor) i kategorin ej kategoriserat. Guiden har ansetts hjälpsam av 17 personer. Har du en fråga om Texas Instruments CSD22204W eller vill du ställa frågor till andra användare av produkten? Ställ en fråga

-V

GS

- Gate-To-Source Voltage (V)

R

DS(on)

- On-State Resistance (m:)

0.511.522.533.544.555.56

0

4

8

12

16

20

24

28

32

D007

T

C

= 25° C, I

D

= -2 A

T

C

= 125° C, I

D

= -2 A

Q

g

- Gate Charge (nC)

-V

GS

- Gate-to-Source Voltage (V)

02468101214161820

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

D004

I

D

= -2 A

V

DS

= -4 V

GSS

SSS

DDD

Gate

Source

Drain

Product

Folder

Sample &

Buy

Technical

Documents

Tools &

Software

Support &

Community

CSD22204W

SLPS559–MARCH2015

CSD22204W–8VP-ChannelNexFET™PowerMOSFET

1Features

ProductSummary

1

•LowResistance

T

A

=25°CTYPICALVALUEUNIT

•SmallFootprint1.5mm×1.5mm

V

DS

Drain-to-SourceVoltage–8V

•PbFree

Q

g

GateChargeTotal(–4.5V)18.9nC

Q

gd

GateChargeGate-to-Drain4.2nC

•GateESDProtection

V

GS

=–2.5V11.5mΩ

•RoHSCompliant

R

DS(on)

Drain-to-SourceOn-Resistance

V

GS

=–4.5V8.2mΩ

•HalogenFree

V

GS(th)

ThresholdVoltage–0.7V

•Gate-SourceVoltageClamp

OrderingInformation

(1)

2Applications

DeviceQtyMediaPackageShip

•BatteryManagement

CSD22204W30007-InchReel1.5mm×1.5mm

Tapeand

WaferBGA

•BatteryProtection

Reel

CSD22204WT2507-InchReel

Package

•LoadSwitchApplications

(1)Forallavailablepackages,seetheorderableaddendumat

theendofthedatasheet.

3Description

This–8V,8.2mΩ,1.5mm×1.5mmdeviceis

.

AbsoluteMaximumRatings

designedtodeliverthelowestonresistanceandgate

chargeinthesmallestoutlinepossiblewithexcellent

T

A

=25°CVALUEUNIT

thermalcharacteristicsinanultralowprofile.Lowon-

V

DS

Drain-to-SourceVoltage–8V

resistancecoupledwiththesmallfootprintandlow

V

GS

Gate-to-SourceVoltage–6V

profilemakethedeviceidealforbatteryoperated

ContinuousDrainCurrent

(1)

–5A

I

D

spaceconstrainedapplications.

PulsedDrainCurrent

(2)

–80A

P

D

PowerDissipation1.7W

TopViewandCircuitConfiguration

T

J

,OperatingJunctionand

–55to150°C

T

stg

StorageTemperatureRange

(1)Deviceoperatingatatemperatureof105ºC.

(2)TypR

θJA

=75°C/W,Pulsewidth≤100μs,dutycycle≤1%.

R

DS(on)

vsV

GS

GateCharge

1

AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,

intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

Produktspecifikationer