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0

4

8

12

16

20

24

28

02468101214161820

V

GS

- Gate-to- Source Voltage (V)

R

DS(on)

- On-State Resistance (mΩ)

T

C

= 25°C Id = 14A

T

C

= 125ºC Id = 14A

G001

0

1

2

3

4

5

6

7

8

9

10

048121620

Q

g

- Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

I

D

= 14A

V

DS

= 30V

G001

1

D

2

D

3

D

4

D

D

5

G

6S

7

S

8S

P0093-01

Product

Folder

Sample &

Buy

Technical

Documents

Tools &

Software

Support &

Community

Reference

Design

CSD18534Q5A

SLPS389D–OCTOBER2012–REVISEDJUNE2015

CSD18534Q5A60VN-ChannelNexFET™PowerMOSFET

1Features

ProductSummary

1

•Ultra-LowQ

g

andQ

gd

T

A

=25°CTYPICALVALUEUNIT

•LowThermalResistance

V

DS

Drain-to-sourcevoltage60V

•AvalancheRated

Q

g

Gatechargetotal(10V)17nC

Q

gd

Gatechargegate-to-drain3.5nC

•LogicLevel

V

GS

=4.5V9.9mΩ

•PbFreeTerminalPlating

R

DS(on)

Drain-to-sourceon-resistance

V

GS

=10V7.8mΩ

•RoHSCompliant

V

GS(th)

Thresholdvoltage1.9V

•HalogenFree

•SON5mm×6mmPlasticPackage

OrderingInformation

(1)

DEVICEQTYMEDIAPACKAGESHIP

2Applications

CSD18534Q5A250013-InchReel

SON5mm×6mmTapeand

PlasticPackageReel

•DC-DCConversion

CSD18534Q5AT2507-InchReel

•SecondarySideSynchronousRectifier

(1)Forallavailablepackages,seetheorderableaddendumat

theendofthedatasheet.

•IsolatedConverterPrimarySideSwitch

•MotorControl

AbsoluteMaximumRatings

T

A

=25°CVALUEUNIT

3Description

V

DS

Drain-to-sourcevoltage60V

This7.8mΩ,60V,SON5×6mmNexFET™power

V

GS

Gate-to-sourcevoltage±20V

MOSFETisdesignedtominimizelossesinpower

Continuousdraincurrent(packagelimited)50

conversionapplications.

Continuousdraincurrent(siliconlimited),T

C

I

D

69A

=25°C

TopView

Continuousdraincurrent,T

A

=25°C

(1)

13

I

DM

Pulseddraincurrent,T

A

=25°C

(2)

229A

Powerdissipation

(1)

3.1

P

D

W

Powerdissipation,T

C

=25°C77

T

J

,Operatingjunction,

–55to150°C

T

stg

Storagetemperature

Avalancheenergy,singlepulse

E

AS

80mJ

I

D

=40A,L=0.1mH,R

G

=25Ω

(1)TypicalR

θJA

=40°C/Wona1inch

2

,2oz.Cupadona

0.06inchthickFR4PCB.

(2)MaxR

θJC

=2.0°C/W,pulseduration≤100μs,dutycycle≤1%

R

DS(on)

vsV

GS

GateCharge

1

AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,

intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

Produktspecifikationer